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| Datasheet File OCR Text: |
| Data Sheet 200 mW EPITAXIAL PLANAR DIODES Mechanical Dimensions Pin 3 Pin 2 NC .037 .115 .037 1 3 2 .110 .060 .016 Description BAS16 3 1 2 Features n PLANAR PROCESS Pin 1 .043 .004 .016 n INDUSTRY STANDARD SOT-23 PACKAGE n MEETS UL SPECIFICATION 94V-0 BAS16 Units Volts Volts n 200 mW POWER DISSIPATION Maximum Ratings Peak Reverse Voltage...VRM RMS Reverse Voltage...VR(rms) Average Forward Rectified Current...IO Non-Repetitive Peak Forward Surge Current...IFSM Power Dissipation...PD Operating Temperature Range...TJ Storage Temperature Range...TSTRG Electrical Characteristics Maximum Forward Voltage...VF @ IF = 150 mA Maximum DC Reverse Current...IR Maximum Frequency...f Maximum Diode Capacitance...CD Maximum Reverse Recovery Time...tRR .01 uF PVV = 100ns 5K Ohms 50 Ohms RG = 50 Ohms Page 10-18 @ VR = 75V ............................................. ......................................... BAS16 85 75 ............................................. 215 ............................................... mAmps 4 200 ............................................... .......................................... Amps mW C C Volts Amps MHz pF ns ......................................... -25 to 85 .......................................... ......................................... -65 to 150 .......................................... ............................................. 1.25 ............................................... ............................................. 1.0 ............................................... ............................................. 100 ............................................... ............................................. 2.0 ............................................... ............................................. 4.0 ............................................... Test Device Under Test IF IR Output Trr 0.1 IR |
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